Measurement of brightness temperature of two-dimensional electron gas in channel of a high electron mobility transistor at ultralow dissipation power

摘要

A technically simple and physically clear method is suggested for the directmeasurement of brightness temperature of two-dimensional electron gas (2DEG) inthe channel of a high electron mobility transistor (HEMT). The usage of themethod was demonstrated with the pseudomorphic HEMT as a specimen. The optimalHEMT dc regime, from the point of view of the "back action" problem, was foundto belong to the unsaturated area of the static characteristics possiblycorresponding to the ballistic electron transport mode. The proposed method isbelieved to be a convenient tool to explore the ballistic transport, electrondiffusion, 2DEG properties and other electrophysical processes in theheterostructures.